VDSM

常见例句

Interconnect delay has become a deterministic factor in VDSM design.
超深亚微米)设计中互连线延迟已在电路延迟中起到决定性作用。
The optical lithography correction techniques become key technologies in the IC designing and manufacturing of VDSM.
光刻校正技术已成为超深亚微米下集成电路设计和制造中关键的技术。
For switchbox routing in VDSM technology, the routing algorithm with alterable parameters for optimizing crosstalk is presented.
摘要针对超深亚微米芯片设计中的开关盒布线问题提出了可变参数的串扰优化布线算法。
Meanwhile the relation of SNM and the gate width is also analyzed, which is consistent with the experiment. The design rules of VDSM SRAM memory cell are given.
文中同时分析了栅宽与 SNM的关系 ,其结论与实验结果一致 ,并给出了 VDSM SRAM存储单元设计中应注意的问题
Impact of Threshold Voltage on VDSM SRAM Memory Cell SNM
阈值电压对超深亚微米SRAM存储单元SNM的影响
very deep submicron (VDSM)
超深亚微米